UHV Magnetron Sputtering System
The UHV magnetron sputtering system comprises sputtering and loading chambers. The sputtering chamber contains four magnetron sources.
Specification
The sputtering chamber is evacuated with a rate of 500 l/s by turbomolecular, volute, and titanium sublimation pumps. The loading chamber is evacuated with a rate of 60 l/s by turbomolecular and volute pumps. The system contains three 500W dc generators and a 300W high-frequency generator.
A substrate heater automatically rotated with a speed of 0–20 rpm ensures heating up to 600°С. An SHQ-15 PID controller provides temperature stability within ±1°С. A 100W generator supplies rf voltage to a substrate.
The system is equipped with
- a MICROVISION quadrupole mass analyzer (1–200 amu) with a resolution of < 5% and a working pressure of 10-4 –10-13 mbar;
- a film thickness meter:
- film thickness measurement accuracy 1A;
- sampling frequency of 4 GHz;
- time resolution 0.1/s,
- stores data on nine materials.