Setup for flux group growing of high-quality single crystals
Specification
The setup comprises several high-temperature furnaces with original PWM-converter-based power sources with a resulting power of up to 4 kW. The furnace temperature regime is PC-controlled, which allows specifying a complete crystal growth program. The furnaces are equipped with flux mixers and a seed growth device.
- maximum allowed temperature 1350°С;
- temperature maintenance accuracy 0.1°С;
- temperature sweeping rate 0.1−50°С/h.
The setup is used for growing high-quality crystals for microwave electronic and magnetooptical applications and scientific investigations. Among recent results are the technique for growing the trigonal single crystals of substituted multiferroic rare-earth ferro- and alumoborates R(1)1-x, R(2)xFe3(BO3)4, R(1)1-x, and R(2)xAl3(BO3)4.